Development of scanning nonlinear dielectric microscopy
Scanning nonlinear dielectric microscopy with atomic resolution has been developed. This microscopy has a world highest sensitivity for the capacitance variation of the order of 10e-22F. This technique can be applicable for evaluation and development of next generation high performance electronic devices, for example, flash memory, SiC & GaN power devices, solar cells and ultrahigh density ferroelectric data storage, etc..
Dielectric Nano-Devices,Information Devices Division
Research Institute of Electrical Communication,Tohoku University
Professor Yasuo Cho E-mail:email@example.com