Shunsuke Fukami,Associate Professor
Shun Kanai,Assistant Professor
Justin Llandro,Assistant Professor
Our research activities aim to deepen the understanding of spin-related physics and to develop new functional materials and devices in which electron and spin states are controlled. We are also working on research and development of advanced technology for spintronics-based devices and integrated circuits, which are expected to realize high performance and low power consumption owing to their nonvolatility.
Functional Spintronics (Prof. Ohno)
We are working on the investigation of spin-related phenomena in magnetic semiconductors and metals, as well as the development of novel functional materials and devices in order to realize low-power functional spintronic devices and integrated circuits. In particular, we are tackling the following challenges; development and characterization of ultrafine magnetic tunnel junction devices, establishment of novel technologies to control magnetism utilizing current or electric field, and preparation of functional spin materials using molecular beam epitaxy and sputtering.
- Electrical, optical, and spin properties of spintronics materials and their applications
- Properties and applications of magnetic semiconductors and their quantum structures
- Spin control in magnetic metal and applications for functional devices
- Spintronic devices with metallic system and its applications for memory and logic integrated circuit
Nano-Spin Materials and Devices(Assoc. Prof. Fukami)
To realize high-performance and low-power integrated circuits based on spintronics, we are working to develop technologies for current-driven fast switching of magnetization in nanoscale devices through material developments and investigation of magnetization dynamics. We also aim to open up new applications utilizing spintronics devices such as neuromorphic computing.
- Dynamics of magnetic domain and domain wall in nanoscale magnet
- Control of magnetization utilizing the spin-orbit interactions
- Development of high-performance spintronics memory devices