Research Institute of Electrical Communication Tohoku University


Maki Suemitsu,Professor

Hirokazu Fukidome,Associate Professor

Goon-Ho Park,Research Fellow

G.Park  M.Suemitsu H.Fukidome


Research Activities

The strategy of scaling-based Si technology in electronics is now facing several severe challenges, due to intrinsic physical properties of Si, difficulties in nano-fabrication of devices, and the saturating bit cost by scaling. In power electronics, on the other hand, higher effiencies are required of devices used in power generation, transmission, and conversion. In this respect, SiC thin films formed on Si substrates, and graphene films formed thereon, are expected to solve these challenges. To introduce SiC and graphene into Si technology, we are studying their surface-related growth mechanisms, development of device fabrication processes, and characterization of their devices.

Laboratory Web Page

Solid State Electronics (Prof. Suemitsu)

By using our original technology of organosilane-based gas-source molecular beam epitaxy, we have succeeded in the formation of qualified SiC thin films on Si substrates at low temperatures (~1000 °C). Using this SiC/Si heterostructure, we have further succeeded for the first time in the epitaxial formation of graphene on Si sub-strates (GOS). We are now studying the betterment of the SiC and GOS films to try to fabricate graphene-based field-effect transistors working in the THz regime and power devices based on SiC/Si.

Research topics

  • Surface chemistry during formation of SiC films on Si substrates
  • SiC-MOSFET on Si substrates.
  • High-speed devices based on graphene-on-silicon structure

Solid State Physics for Electronics(Assoc.Prof. Fukidome)

By use of nano-scale characterizations centered on synchrotron-radiation analyses, we are investigating the device properties of SiC as well as of Dirac electrons and two-dimensional electron systems such as graphene. In particular, our finding of controlling the surface structural and electronic properties of graphene in terms of the crystallographic orientation of the Si substrate paves a way to industrialization of graphene. Use of nano-fabrication is also investigated to realize further control of graphene properties. Furthermore, we develop operando x-ray spectromicroscopy, and exploit device physics of novel nanodevices.

Research topics

  • Development of integrated multi-functional Dirac-electron devices using MEMS-based device fabrication processes.
  • Development of novel nano-device physics by use of operando-microscopy.

Fig1. The world-first graphene-on-silicon technology
Fig2. Graphene: A two-dimensional network of carbon atoms
Fig3. A UHV-compatible process/analyses system and the STM image of a Si surface (inset).