Research Institute of Electrical Communication Tohoku University

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(Shigeo Sato),Professor

Hirokazu Fukidome,Associate Professor

Kwan-Soo Kim,Research Fellow

Fuminori Sasaki,Research Fellow

K.Kim, H.Fukidome, F.Sasaki

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Research Activities

The strategy of scaling-based Si technology in electronics is now facing several severe challenges, due to intrinsic physical properties of Si, difficulties in nano-fabrication of devices, and the saturating bit cost by scaling. Furthermore,internet of things (IoT),which is the infrastructure of smart society, needs various kinds of sensors and communication devices. For this reasons, high-performance devices based on new materials except Si is the important social issue. We are conducting the reasearches for the next-generation materials using such as graphene and nitride semiconductors, from material exploration to device devlopments.

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Solid State Physics for Electronics(Assoc.Prof. Fukidome)

By use of nanoscale characterizations centered on synchrotron radiation analyses, we are clarifying the relation between electronic properties and device performances of Dirac electrons and two-dimensional electron systems such as graphene and GaN. In particular, our finding of controlling the surface structural and electronic properties of graphene in terms of the crystallographic orientation of the Si substrate paves a way to industrialization of graphene. In combination with nano-fabrication nanoscopically controlling electronic band structures of graphene, the academia-industrial alliance study is being conducted to realize graphene-based devices. Furthermore, we develop operando x-ray spectromicroscopy, i.e. element- and site-specific investigation of electronic states of devices in operation and exploit device physics of novel nanodevices.

Research topics

  • Development of integrated multi-functional Dirac-electron devices using MEMS-based device fabrication processes.
  • Development of novel nano-device physics by use of operando-microscopy.

Fig1. Graphene: A two-dimensional network of carbon atoms
Fig2. A UHV-compatible process/analyses system and the STM image of a Si surface (inset).