Molecular beam epitaxy (MBE)- sputtering equipment for the growth of III-V based ferromagnetic/nonmagnetic semiconductor heterostructures and magnetic metal devices.
Schematic of magnetization direction control by the application of electric-filed.
2Mb Spin-Transfer Torque RAM (SPRAM) chip developed in collaboration with Hitachi.
Research activities:
Our research activities cover the areas of preparation, characterization, and application of new classes of compound semiconductors and their quantum structures for new functional high-speed devices, which can be realized by controlling the electronic and spin states in semiconductors. More specifically, our research is focused on (1) Semiconductor Spintronics, where non-volatile spin memory and new functionality based on the spin degree of freedom using III-V based ferromagnetic/non-magnetic semiconductor heterostructures are being explored, (2) THz-far infrared lasers based on the intersubband optical transition in broken-gap semiconductor heterostructures (InAs/GaSb), (3) the quantum transport phenomena in two-dimensional electron gases, and (4) non-volatile spin memories based on magnetic metal devices.
Materials of interest include such nonmagnetic semiconductor heterostructures as GaAs/AlAs and InAs/GaSb, and III-V based ferromagnetic semiconductors such as (Ga,Mn)As and (In,Mn)As. All these materials are prepared by Molecular Beam Epitaxy.
Research topics:
- Semiconductor Spintronics
- Properties and Application of III-V Based Ferromagnetic Semiconductors and their Quantum Structures
- Spin Memory
- Spin Coherence in Semiconductor Nanostructures and Its Application to Quantum Information Technology
- Quantum Cascade Structures and Their Application to THz Optical Devices
- Growth and Characterization of Semiconductor Quantum Nano-Structures
- Magnetic Metal Devices and their Application to Nonvolatile Spin Memories

