Research activities:

In order to realize new functional spintronic and high-speed devices, our research activities cover the areas of preparation, characterization, and application of new classes of solid state materials as well as their quantum structures, in which electronic and spin states can be controlled.

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Functional Spintronics (Prof. H. OHNO)

We are working on materials, physics, devices and integration aspects of spintronics, in order to understand spin-related phenomena in condensed matter and to realize low-power functional spintronics devices.

Research topics:

1. Spintronics
2. Spin-related phenomena in semiconductors
3. Magnetic metal functional devices and their application
4. Quantum cascade structures and their application to THz optical devices

Nano-Spin Memory (Associate Prof. IKEDA)

We are developing technologies to realize high-performance low-power consumption spin memory and logic devices using magnetic tunnel junctions (MTJs) consisting of ferromagnetic metal electrodes with in-plane or perpendicular magnetic anisotropy and insulating barrier.

Research topics:

5. Magnetic tunnel junctions with high output voltage
6. Metal-based spintronics devices
7. Spin transfer torque memory and logic devices

Research Institute of Electrical Communication Tohoku University