INSIDE the Laboratory

Laboratory for Nanoelectronics and Spintronics

Semiconductor Spintronics Laboratory

Hideo Ohno, Professor
Shun Kanai, Assistant professor

http://www.ohno.riec.tohoku.ac.jp/

There are currently 22 members in this laboratory; Prof. Hideo Ohno, Assistant prof. Shun Kanai, two postdoctoral fellows, one research assistant, one secretary, five Ph. D. candidates, five Master course students, four undergraduate-school students, and two research students. We collaborate with members of the WPI-Advanced Institute for Materials Research (WPI-AIMR), the Center for Spintronics Integrated Systems (CSIS), and the Center for Innovative Integrated Electronics Systems (CIES) for the research on Spintronics. There are six members from abroad; China, Taiwan, France, India, Philippines, and Russia.

Spintronics, where both the electron spin and charge degrees of freedom are controlled, is attracting much attention not only because it is a frontier of condensed matter physics but also because it provides cutting edge technology not attainable without using the spin degree of freedom. We work on both semiconductor spintronics and metal spintronics. In semiconductor spintronics, our research focuses on the spin-dependent properties of ferromagnetic semiconductors as well as the spin phenomena in non-magnetic semiconductors. Our work has resulted in new concepts of condensed matter physics as well as in demonstrations of proof-of-concept spintronics devices with new functionalities. These concepts are now transferred to metallic spintronics devices. Metal spintronics is also important in its own right. Here we investigate a number of phenomena that are critical to near future integrated circuit technology. They include the giant variation of electric resistance according to the magnetization configuration, magnetization switching with spin transfer in ferromagnetic metal/ insulator/ ferromagnetic metal (magnetic tunnel junction structure) structures with diameters down to 11 nanometers (=11×10-9 m), non-magnetic metal/ times symbol ferromagnetic metal structures, and electrical manipulation of the interface magnetic anisotropy of ferromagnetic metals/ insulators. These technologies are now being applied to stand-by power free, ultralow power consumption, non-volatile very large scale integrated circuits (VLSI) through collaborative joint research and development.

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