Researcher

Group Web Site

http://www.fukidome.riec.tohoku.ac.jp/

Research Activities

The strategy of scaling-based Si technology in electronics is now facing several severe challenges, due to intrinsic physical properties of Si, difficulties in nano-fabrication of devices, and the saturating bit cost by scaling. Furthermore, internet of things (IoT), which is the infrastructure of smart society, needs various kinds of sensors and communication devices. For this reasons, high-performance devices based on new materials except Si is the important social issue. We are conducting the reasearches for the next-generation materials using such as graphene and nitride semiconductors, diamond, from material exploration to device devlopments.

Solid State Physics for Electronics(Assoc.Prof. Fukidome)

Research topics

• Multifunctional integration of 2D electron devices
• Academia-industrial alliance study for graphene devices application
• Operando nano-X-ray Spectroscopy for Extreme-Environment Devices and Industry–Academia alliance study
• Realization of the ultimately-shrunk transistor down to a monomolecular level

We investigates the physical properties of devices based on Dirac-electron systems such as graphene and 2D electron-gas materials such as GaN, using advanced nanoscale characterization techniques centered on synchrotron radiation, and elucidates the relationship between the electrical properties of new materials such as graphene and those of devices fabricated from them. In particular, we have developed a method for controlling the structure and electronic properties of graphene through substrate crystallographic orientation, opening a path toward the industrialization of graphene. Together with the control of graphene properties through nanofabrication, this constitutes a major focus of our industry–academia collaborative research. We are also pioneering operando nano-X-ray spectroscopy using NanoTerasu to bridge the gap between material properties and device characteristics, thereby exploring the device physics of novel nanodevices. Furthermore, we are currently working toward the creation of ultimate transistors scaled down to the single-molecule level, aiming at the realization of high-output THz-band transistors.

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