- >> Information Communication Platforms Division
-
Ultra-Broadband Signal Processing
Researcher
- [ Professor ]
Taiichi Otsuji - [ Associate Professor ]
Akira Satou - [ Specially Appointed Associate Professor ]
Tsung Tse Lin - [ Assistant Professor ]
Takayuki Watanabe - [ Research Fellow ]
Victor Ryzhii - [ Research Fellow ]
Chao Tang
Group Web Site
https://www.otsuji.riec.tohoku.ac.jp/english/index_en.php
Research Activities
Terahertz (sub-millimeter) coherent electromagnetic waves are expected to explore the potential application fields of future information and communications technologies. We are developing novel, ultra-broadband integrated signal-processing devices/systems operating in the millimeter and terahertz frequency regime.
Ultra-Broadband Devices and Systems (Prof. Otsuji)
Research topics
- Creation of Graphene Terahertz Lasers.
- Creation of 2D-Atomically-Thin-Layered Hetero-junctions and their Applications to Novel Terahertz Photonic Devices.
- Physics of Graphene Dirac Plasmons and its Terahertz Functional Applications.
- Creation of EIC (Energy-Information-Communication) Converged Resilient Network Infrastructure towards Super-Smart Society
We are developing novel, integrated electron devices and circuit systems operating in the millimeter-wave and terahertz regions. III-V- and graphene-based active plasmonic heterostructures for creating new types of terahertz lasers and ultrafast transistors are major concerns. By making full use of these world-leading device/circuit technologies, we are exploring future ultra-broadband wireless communication systems as well as spectroscopic/imaging systems for safety and security.
Ultra-broadband Device Physics (Assoc. Prof. Satou)
Research topics
- 2D Plasmons in Graphene and Compound-Semiconductor Heterostructures and Their Applications to Terahertz Sources and Detectors.
- Terahertz Optical Gain in Graphene and Its Application to Terahertz Lasers.
- Photonics-Electronics Convergence Carrier Converters.
We are developing novel, integrated electron devices and circuit systems operating in the millimeter-wave and terahertz regions. III-V- and graphene-based active plasmonic heterostructures for creating new types of terahertz lasers and ultrafast transistors are major concerns. By making full use of these world-leading device/circuit technologies, we are exploring future ultra-broadband wireless communication systems as well as spectroscopic/imaging systems for safety and security.
