第71回ナノ・スピン工学研究会
第71回ナノ・スピン工学研究会
研究会名:第71回ナノ・スピン工学研究会
開催日:2014年5月15日(木)14:00~17:00
開催場所:東北大学電気通信研究所ナノ・スピン研究棟5階A508室
題目: Plasma wave transistor for terahertz imaging”(in English)
講師:Dr. Igor SEMENIKHIN, RIEC Visiting Associate Professor(Senior Researcher, Institute of Physics and Technology, RAS, Moscow, Russia)
題目:Some approaches to the solution of equations of mathematical physics” (in English)
講師:Dr. Dmitry SVINTSOV, JSPS Postdoctoral Fellow (Researcher, Institute of Physics and Technology, RAS, Moscow, Russia)
第71回ナノ・スピン工学研究会・通研講 演会の開催について
各位、
東北大学電気通信研究所
ブロードバンド工学研究部門
超ブロードバンド信号処理研究分野 教授
尾辻 泰一
第71回ナノ・スピン工学研究会・通研講 演会の開催について
拝啓、時下ますますご清祥のこ ととお喜び申し上げます。
さて、下記の通り第71回 ナノ・スピン工学研究会を開催致しますので、皆様多数ご参集下さいますようご案内申し上げます。
敬具
記
東北大学第71回ナノ・スピン工学研究会-テラヘルツ波帯グラフェンデバイス-
日時:2014年5月15日(木)14:00~17:00
場所:東北大学電気通信研究ナノ・スピン研究棟5階A508室(〒980-8577 仙台市青葉区片平2-1-1)
言語:英語
プログラム:
5/15
“Introduction to numerical methods for the solution of Maxwell’s equations” (in English)
14:00-15:30
Dr. Igor SEMENIKHIN, RIEC Visiting Associate Professor
(Senior Researcher, Institute of Physics and Technology, RAS, Moscow, Russia)
Over the past decades an increasing interest has been devoted to the rigorous solution of Maxwell’s equations in order to study the optical properties of optoelectronic devices including image sensors, nanostructured solar cells, photonic crystals and diffraction gratings. Such structures exhibit geometrical dimension comparable or even smaller than the radiation wavelengths, therefore the solution of Maxwell’s equations is required. To date a large number of algorithms have been developed to solve Maxwell’s equations for the analysis of these structures. Among them, the algorithms based on eigenmode expansion are widely used. The presentation will focus special attention on the Fourier modal method (FMM) also known as Rigorous Coupled-Wave Analysis method (RCWA). Some other modal methods including Polynomial expansion modal method and Analytic modal method will also be discussed.
15:30-17:00
“Some approaches to the solution of equations of mathematical physics” (in English)
Dr. Dmitry SVINTSOV, JSPS Postdoctoral Fellow
(Researcher, Institute of Physics and Technology, RAS, Moscow, Russia)
Tunneling in semiconductors much differs from free electron tunneling and is quite similar to Schwinger’s mechanism of electron-positron vacuum breakdown. Despite such pure science analogy, this phenomenon finds its applications in common devices – lasers, microwave generators, and flash memories. Absence of band gap in graphene allows almost unimpeded electron tunneling between valence and conduction bands. This effect (called sometimes ‘Klein paradox’) is actually a killer of all logic device applications of graphene. Recent advances in layered heterostructures composed of graphene, boron nitride, and transition metal chalcogenides start a new age in the evolution of graphene-based tunneling devices.
お問合せ先:
東北大学電気通信研究所
ブロードバンド信号処理研究室
助教 佐藤 昭
TEL:022-217-6108